dna width orders of magnitude vs transistor gate

#Dna width orders of magnitude vs transistor gate series#

If either or both of the inputs is high, the output is driven low. In this alternative way to achieve NOR logic, only one transistor is used with the two inputs tied to its base through resistors. 2 b and c depict smooth PCBM film on top of DNACTMA film and pentacene crystallites on the DNACTMA layers. When the base-emitter diode is turned on enough to be driven into saturation, the collector voltage with respect to the emitter may be near zero and can be used to construct gates for the TTL logic family. The surface morphology of low molecular weight DNACTMA (300 kDa), revealed a surface roughness <5 nm in such films as shown in Fig. The use of transistors for the construction of logic gates depends upon their utility as fast switches. A in the off state is modulated by the gate field up to 4 orders of magnitude, reaching a saturated I of 10. For the NOR logic, the transistors are in parallel with the output above them so that if either or both of the inputs are high, the output is driven low. When the base-emitter diode is turned on enough to be driven into saturation, the collector voltage with respect to the emitter may be near zero and can be used to construct gates for the TTL logic family. The use of transistors for the construction of logic gates depends upon their utility as fast switches. The output is high unless both A and B inputs are high, in which case the output is taken down close to ground potential. For the NAND logic, the transistors are in series, but the output is above them. For the OR logic, the transistors are in parallel and the output is driven high if either of the transistors is conducting. When the base-emitter diode is turned on enough to be driven into saturation, the collector voltage with respect to the emitter may be near zero and can be used to construct gates for the TTL logic family. There are two basic types of bipolar transistor construction, NPN and PNP, which basically describes the physical arrangement of the P-type and N-type semiconductor materials from which they are made. The velocity of charge carriers (holes or electrons for p- or n-type.

HyperPhysics***** Electricity and magnetism An OFET essentially acts as an on/off switch, where the electrical current flowing between the drain and source electrodes (I DS) is controlled by the voltage between the gate and source electrodes (V GS) under an imposed bias between the drain and source electrodes (V DS).

#Dna width orders of magnitude vs transistor gate series#

For the AND logic, the transistors are in series and both transistors must be in the conducting state to drive the output high.